High current gain silicon-based spin transistor
نویسندگان
چکیده
منابع مشابه
High current gain silicon - based spin
A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then...
متن کاملHigh current gain transistor laser
A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitt...
متن کاملBallistic Spin Field Effect Transistor Based on Silicon Nanowires
Submitted for the MAR11 Meeting of The American Physical Society Sorting Category: 17.9.5 (C) Ballistic Spin Field Effect Transistor Based on Silicon Nanowires1 DMITRI OSINTSEV, VIKTOR SVERDLOV, ZLATAN STANOJEVIC, SIEGFRIED SELBERHERR, Institute for Microelectronics, TU Wien — We investigate the properties of ballistic spin fieldeffect transistors build on silicon nanowires. An accurate descrip...
متن کاملProperties of Silicon Ballistic Spin Fin-Based Field-Effect Transistor
We investigate the properties of ballistic fin-structured silicon spin field-effect transistors. The spin transistor suggested first by Datta and Das employs spin-orbit coupling to introduce the current modulation. The major contribution to the spin-orbit interaction in silicon films is of the Dresselhaus type due to the interface-induced inversion symmetry breaking. The subband structure in si...
متن کاملUltra-high gain diffusion-driven organic transistor
Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics D: Applied Physics
سال: 2002
ISSN: 0022-3727
DOI: 10.1088/0022-3727/36/2/303